Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.Comment: 4 pages, 4 figures, to appear in Applied Physics Letter

Stripe Formation in Fermionic Atoms on 2-D Optical Lattice inside a Box Trap: DMRG Studies for Repulsive Hubbard Model with Open Boundary Condition

We suggest that box shape trap enables to observe intrinsic properties of the repulsive Hubbard model in a fixed doping in contrast to the harmonic trap bringing about spatial variations of atom density profiles. In order to predict atomic density profile under the box trap, we apply the directly-extended density-matrix renormalization group method to 4-leg repulsive Hubbard model with the open boundary condition. Consequently, we find that stripe formation is universal in a low hole doping range and the stripe sensitively changes its structure with variations of $U/t$ and the doping rate. A remarkable change is that a stripe formed by a hole pair turns to one by a bi-hole pair when entering a limited strong $U/t$ range. Furthermore, a systematic calculation reveals that the Hubbard model shows a change from the stripe to the Friedel like oscillation with increasing the doping rate

Voltage-biased I-V characteristics in the multi-Josephson junction model of high Tc_c superconductor

By use of the multi-Josephson junction model, we investigate voltage-biased I-V characteristics. Differently from the case of the single junction, I-V characteristics show a complicated behavior due to inter-layer couplings among superconducting phase differences mediated by the charging effect. We show that there exist three characteristic regions, which are identified by jumps and cusps in the I-V curve. In the low voltage region, the total current is periodic with trigonometric functional increases and rapid drops. Then a kind of chaotic region is followed. Above certain voltage, the total current behaves with a simple harmonic oscillation and the I-V characteristics form a multi-branch structure as in the current-biased case. The above behavior is the result of the inter-layer coupling, and may be used to confirm the inter-layer coupling mechanism of the formation of hysteresis branches.Comment: 12 pages, Latex, 4 figure

Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.Comment: 3 pages, 4 figures, submitted to Appl. Phys. Let